Crystal Research and Technology
Cryst. Res. Technol. 37 (2002) 587 - Abstract -

A. F. Qasrawi, N. M. Gasanly*

Faculty of Engineering, Atilim University, Kizilcasar Koyu, Incek-Golbasi, 06836 Ankara, Turkey
*Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

Carrier Scattering Mechanisms in GaS0.5Se0.5 Layered Crystals

Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150-400 K on n-type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4x1017 and 4.1x1016 cm-3, respectively, and an electron effective mass of 0.41 m0 . The Hall mobility is limited by the electron-phonon short-range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron-phonon short-range interactions scattering mobility analysis reveals an electron-phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Å.

Keywords: GaS0.5Se0.5 crystals, resistivity, Hall mobility, scattering mechanisms


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