V. I. Talanin, I. E. Talanin, D. I. Levinson: Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon

Crystal Research and Technology

Cryst. Res. Technol. 37 (2002) 983 - Abstract -

V. I. Talanin, I. E. Talanin, D. I. Levinson

Zaporozhye State Engineering Academy, Lenin avenue 226, 69006 Zaporozhye, Ukraine

Physical Model of Paths of Microdefects Nucleation in Dislocation-Free Single Crystals Float-Zone Silicon

With the help of selective etching, transmission electron microscopy complex researches of non-doped dislocation-free single crystals of float-zone silicon by a diameter of 30 mm were conducted. The crystals were obtained with various growth rates and were subjected to various kinds of technological effects. Is established that the process of microdefects formation in silicon proceeds simultaneously on two independent mechanisms: vacancy and interstitial. The physical model of formation of microdefects in dislocation-free monocrystals of FZ silicon is offered.

Keywords: silicon, point defects, self-interstitials, vacancies, microdefects

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