Crystal Research and Technology
Cryst. Res. Technol. 37 (2002) 1088 - Abstract -

E. Hernández, A. López Pescador*, C. A. Durante Rincón, M. León*

Departamento de Física, Facultad Experimental de Ciencias, Universidad del Zulia, Apdo Postal 526, Maracaibo, Venezuela
*Departamento de Física Aplicada, Facultad de Ciencias, C-XII, Universidad Autónoma de Madrid, 28049 Madrid, Espaņa

Electrical Properties of CuIn3Se5 Bulk Crystal at Low Temperature

CuIn3Se5 crystals were grown from the melt containing stoichiometric quantities of the elements of at least 5 N purity. The structure was analyzed by X-ray powder diffraction, and shows mainly a tetragonal single phase. The chemical composition was determined by EDAX and Total X-Ray Fluorescence (TXRF). The conductivity and the Hall effect have been measured in the temperature range from 10 to 300 K. The polar optical scattering was found to dominate at low temperatures, while in the high temperature region ionized impurity scattering mechanism was observed.

Keywords: OVC, CuIn3Se5, ternary semiconductor, electrical properties


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