Crystal Research and Technology
Cryst. Res. Technol. 37 (2002) 1215 - Abstract -

S. D. D. Roy, N. Sankar, K.Ramachandran, P. Raji, T. S. Vivekanandan*

School of Physics, Madurai Kamaraj University, Madurai - 625 021, India
*School of Chemistry, Madurai Kamaraj University, Madurai- 625 021, India

Photoacoustic and X-ray Studies on H+ Ion Implanted n-GaAs

Qualitative and quantitative analysis on the defects in H+ ion implanted (30keV with doses 1014, 1015, 1016 and 1017 ions/cm2) n-GaAs are carried out here by Atomic Force Microscopy (AFM), XRD and Photoacoustic measurements, for various doses. The close agreement between these measurements reveal that even the microscopic strain parameter ε1 (from XRD) can be viewed microscopically with photoacoustics. Various thermal parameters are computed for the 30 keV H+ ion implanted n-GaAs and reported for the first time.

Keywords: photoacoustics, X-ray diffraction, atomic force microscopy, ion- implantation, strain parameters, thermal parameters


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