Electrical Resistivity and Thermally Stimulated Current in CuIn<SUB>5</SUB>Se<SUB>8</SUB> by E. Hernández, L. Durán, C. A. Durante Rincón, G. Aranguren, C. Guerrero, J. Naranjo

Crystal Research and Technology

Cryst. Res. Technol. 37 (2002) 1227 - Abstract -

E. Hernández, L. Durán, C. A. Durante Rincón, G. Aranguren, C. Guerrero, J. Naranjo*

Laboratorio de Ciencia de Materiales, Departamento de Física, Facultad Experimental de Ciencias, Universidad del Zulia, OPT. Galerías, Apdo. Postal 15620 Maracaibo, Venezuela
*Instituto Universitario de Tecnología de Maracaibo, Maracaibo, Venezuela

Electrical Resistivity and Thermally Stimulated Current in CuIn₅Se₈

From electrical resistivity measurements in the range from 240 to 450 K and from optical absorption measurements the energy gap value of CuIn₅Se₈ has been found to be 1.13 eV. Thermally stimulated current and electrical measurements at high temperature performed in indium annealed samples show deep levels at 0.55 and 0.79 eV, respectively. These defects are expected to be associated with interstitial indium or indium in copper site because of the In-rich condition.

Keywords: ternary semiconductor, CuIn5Se8, ordered vacancy compound, copper compound, thermally stimulated current, electrical resistivity

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