Crystal Research and Technology
Cryst. Res. Technol. 37 (2002) 1257 - Abstract -

Y. T. Kim, S. M. Cho, Y. G. Seo*, H. D. Yoon*, Y. M. Im*, D. H. Yoon

Department of Advanced Materials Engineering, Sungkyunkwan University, Suwon 440-746, Korea
*Optical Telecommunication Research Center, Korea Electronics Technology Institute, Pyungtaek, 451-865, Korea

Influence of hydrogen on SiO2 thick film deposited by PECVD and FHD for silica optical waveguide

Silicon dioxide(SiO2) thick films have been deposited by plasma enhanced chemical vapor deposition(PECVD) and flame hydrolysis deposition(FHD). PECVD SiO2 films were obtained at low temperatures(<350°C) by the decomposition of the appropriate mixture of (SiH4+N2O) gases under suitable rf power and N2O/SiH4 ratio. For low N2O/SiH4 ratio, a refractive index(n) value close to 1.50 is obtained. The deposition rate increased with the increase of rf power. FHD SiO2 films were produced by the flame hydrolysis reaction of halide materials such as SiCl4, POCl3 and BCl3 in an oxy-hydrogen torch. The porous SiO2 layer, under the POCl3/BCl3 ratio deposition condition, has to be consolidated by annealing at around 1300°C.

Keywords: plasma enhanced chemical vapor deposition, flame hydrolysis deposition, silicon dioxide, annealing


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