Crystal Research and Technology
Cryst. Res. Technol. 37 (2002) 1285 - Abstract -

B. Karunagaran, R. T. Rajendra Kumar, D. Mangalaraj, Sa. K. Narayandass, G. Mohan Rao*

Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore 641 046, Tamil Nadu, India
*Vacuum and Thin Film Laboratory, Department of Instrumentation, Indian Institute of Science (IISc), Bangalore 560 012, India

Influence of thermal annealing on the composition and structural parameters of DC magnetron sputtered titanium dioxide thin films

Titanium dioxide films have been deposited using DC magnetron sputtering technique. Films were deposited onto RCA cleaned p-silicon substrates at the ambient temperature at an oxygen partial pressure of 7x10–5 mbar and sputtering pressure of 1x10–3 mbar. The deposited films were annealed in the temperature range 673 – 873 K. The structure and composition of the films were confirmed using X-ray diffraction and Auger electron spectroscopy. The structure of the films deposited at the ambient was found to be amorphous and the films annealed at 673 K and above were crystalline with anatase structure. The lattice constants, grain size, microstrain and the dislocation density of the film are calculated and correlated with annealing temperature.

Keywords: TiO2 thin films, dc magnetron sputtering, AES, structural parameters


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