Preparation, structure and thermal properties of CuGa<SUB>5</SUB>Se<SUB>8</SUB> by N. S. Orlova, I. V. Bodnar, T. L. Kushner

Crystal Research and Technology

Cryst. Res. Technol. 38, 125 (2003) - Abstract -

Preparation, structure and thermal properties of CuGa₅Se₈

N. S. Orlova, I. V. Bodnar*, T. L. Kushner**

Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus P.Brovka str., 17, 220072 Minsk, Belarus
*Belarussian State University of Informatics and Radioelectronics, P.Brovka str., 6. 220027 Minsk, Belarus
**Brest State Technical University, Moskovskaya str., 267, 224017 Brest, Belarus

Keywords defect chalcopyrite, crystal growth, thermal expansion, melting temperature, X-ray diffraction

The structural parameters, the axial thermal expansion coefficients and the characteristic Debye temperatures for the order vacancy compound CuGa₅Se₈ with the chalcopyrite-related structure, prepared by the Bridgman technique, were determined at different temperatures between 90 and 650 K by the X-ray diffraction method. The melting point of this compound was defined from the differential thermal analysis data. The anisotropy of thermal expansion in CuGa₅Se₈ is shown to exist with the coefficients along a-axis being larger than those along the c-axis throughout the temperature range studied.

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