Solid state recrystallization: a promising technique for the growth of semiconductor materials by R. Triboulet

Crystal Research and Technology

Cryst. Res. Technol. 38, 215 (2003) - Abstract -

Solid state recrystallization: a promising technique for the growth of semiconductor materials

R. Triboulet

CNRS, Laboratoire de Physique des Solides et de Cristallogenèse, 1, Place Aristide Briand, F 92195 Meudon Cedex, France

Keywords solid state recrystallization, HgCdTe, HgMnTe, ZnSe, ZnS, CdTe, texture, stoichiometry

Experimental results related to the growth by solid state recrystallization of different semiconductors such as HgCdTe, HgMnTe, CdTe, ZnSe and ZnS are reported and reviewed. The importance of the initial texture and of the deviation from stoichiometry is stressed and the essential role of metal vacancies is emphasized.

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