Hydrogen implantation effect on optical properties of GaAs doping superlattices by H. W. Kunert, D. Dale, M. Hayes, J. Malherbe, V. K. Kononenko, J. Barnas

Crystal Research and Technology

Cryst. Res. Technol. 38, 344 (2003) - Abstract -

Hydrogen implantation effect on optical properties of GaAs doping superlattices

H. W. Kunert, D. Dale, M. Hayes, J. Malherbe, V. K. Kononenko*, J. Barnas**

Department of Physics, University of Pretoria, 0002 Pretoria, South Africa
*Stepanov Institute of Physics, National Academy of Sciences of Belarus, Fr. Scorina Pr. 70, 220072 Minsk, Belarus
**Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznan, Poland

Keywords photoluminescence, Raman spectroscopy, implantation, GaAs, doping superlattices

Experimental results on the response of GaAs doping superlattices to 1 MeV hydrogen implantation at the doses of 5x10¹⁶, 1x10¹⁷, and 5x10¹⁷ cm^-2 are presented. The samples were studied by means of photoluminescence and inelastic light scattering spectroscopy. Several new optically stable transitions above the effective energy band were observed. Structural changes were monitored by Raman spectroscopy. Possible origin of the new transitions is discussed. An attempt is also made to determine character of the tunable behavior of the parameters in as-grown and treated superlattices.

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