Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon by V. V. Emtsev Jr., C. A. J. Ammerlaan, V. V. Emtsev, G. A. Oganesyan, A. Misiuk, B. Surma, A. Bukowski, C. A. Londos, M. S. Potsidi

Crystal Research and Technology

Cryst. Res. Technol. 38, 394 (2003) - Abstract -

Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon

V. V. Emtsev Jr., C. A. J. Ammerlaan, V. V. Emtsev*, G. A. Oganesyan*, A. Misiuk**, B. Surma***, A. Bukowski****, C. A. Londos*****, M. S. Potsidi*****

Van der Waals–Zeeman Institute, University of Amsterdam, Valckenierstraat 65, 1018XE Amsterdam, The Netherlands
*Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
**Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
***Institute of Electronic Materials Technology, ITME, ul. Wólczyńska 133, 02-668 Warsaw, Poland
****Silicon CEMAT, ul. Wólczyńska 133, 02-668 Warsaw, Poland
*****Dept. of Physics, Section of Solid State Physics, University of Athens,Panepistimiopolis Zografos,GR- 157 84 Athens, Greece

Keywords silicon, heat treatment, compressive stress, oxygen agglomeration, thermal donors

The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at T=450°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen-related donors are formed under compressive stress. The first one is the well-known thermal double donors whose production rate is increased by a factor of five as compared with that observed at atmospheric pressure. Along with them, new thermal donors with similar energy states are also produced. This family was found to be a dominant contributor to the thermal donors formed under compressive stress. The features of formation processes of both kinds of thermal donors are briefly discussed.

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