Crystal Research and Technology
Cryst. Res. Technol. 38, 399 (2003) - Abstract -

Optical properties of an In0.22Ga0.78Sb/GaSb single quantum well

R. Kudrawiec, L. Bryja, G. Sęk, K. Ryczko, J. Misiewicz, and A. Forchel*

Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
*Institute of Physics, Würzburg University, Am Hubland, D-97074 Wurzburg, Germany

Keywords    photoluminescence, photoreflectance, GaSb, quantum well

Optical properties of an In0.22Ga0.78Sb/GaSb single quantum well (SQW) have been investigated by photoluminescence (PL) and photoreflectance (PR). Two electron and heavy hole confined states, which had been expected from envelope function calculations, have been detected experimentally. Besides two allowed transitions (1HH-1C and 2HH-2C) also forbidden one (1HH-2C) has been observed in PR. In PL experiment, which had been performed in broad excitation power (EP) range at different temperatures, the state filling effect has been investigated. At 10 K with the increase of EP density to 2 W/cm2 a linear dependence of integrated PL intensity has been observed. The character of the PL emission is excitonic and does not change with the increase of EP in that excitation range. Above the excitation density of 2 W/cm2 the in-plane heating of the quantum well carriers occurs. With the increase of temperature the nature of recombination process changes from excitonic to free-carrier recombination type. Above 60 K only the free-carrier recombination take place and for high excitation power an emission from the excited state (2HH-2C) emerges.



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