Crystal Research and Technology
Cryst. Res. Technol. 38, 407 (2003) - Abstract -

Magneto-transport in single InGaAs quantum wells of different shapes

G. Tomaka, E. M. Sheregii, T. Kakol, W. Strupiński*, R. Jakiela*, A. Kolek**, A. Stadler**, K. Mleczko**

Institute of Physics, University of Rzeszów, Rejtana 16a, 35-310 Rzeszów, Poland
*Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
**Department of Fundamental Electronics, Rzeszów University of Technology, W. Pola, 235-959 Rzeszów, Poland

Keywords    InxGa1-xAs/InyAl1-yAs QW, magneto-transport, Shubnikov-de Haas oscillations

The magneto-transport measurements in InGaAs/InAlAs quantum wells (QW) obtained by MOCVD technology on InP substrates, and known as High Electron Mobility Transistors, were performed at low temperatures of 0.4 - 15 K and high magnetic fields up to 10 T (with the magnetic field induction B perpendicular to the plane of the well). Three kinds of structures were studied. The Shubnikov-de Haas oscillations demonstrating the occupancy of two subbands were observed. In order to determine the energies of Landau levels in the QW subbands, we have used the Zawadzki-Pfeffer quazi-two-band model. Good agreement between calculated Landau levels and Fermi level from one hand, and positions of the Shubnikov-de Haas oscillations peaks from the other, enable us to determine the parameters of 2D electron gas in QW: effective mass and carrier density.



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