Crystal Research and Technology
Cryst. Res. Technol. 38, 488 (2003) - Abstract -

X-ray structural phase analysis of CdTe semiconductor annealed in air

Z. K. Heiba

Physics Department, Faculty of Science, Ain Shams University, Cairo, Egypt

Keywords    cadmium chalcogenides, semiconductor oxidation, X-ray quantitative analysis

X-ray structural phase analysis of CdTe semiconductor, thermally annealed in air at temperature range 373-773 K and annealing time 24 hrs, is investigated applying Rietveld method. The results showed that at low temperatures < 523 K, oxygen diffuses into the (1/2 1/2 1/2) interstitial sites of the CdTe lattice and its relative occupancy increases with the annealing temperature. For higher temperatures >= 523 K, the thermally grown oxide CdTeO3 phase is developed on expense of CdTe phase. The percentage phase abundance of each phase is determined at each temperature applying a standardless method. The rate of oxidation with temperature is found to be non-linear.



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