In situ observation experiment for semiconductor solution growth under reduced convection condition – a review by Yuko Inatomi and Kazuhiko Kuribayashi

Crystal Research and Technology

Cryst. Res. Technol. 38, 535 (2003) - Abstract -

In situ observation experiment for semiconductor solution growth under reduced convection condition – a review

Yuko Inatomi and Kazuhiko Kuribayashi

The Institute of Space and Astronautical Science, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan

Keywords	in situ observation, semiconductor crystal, morphological stability; magnetic field, microgravity, convection, LPE, THM
PACS	81.15.L, 78.66.F
DOI	10.1002/crat.200310068

Morphological stability of solid/liquid interface in semiconductor crystal growth from solution has been investigated using a near-infrared microscopic interferometer under a reduced convection condition by authors and Prof. Benz’s group. In the result, step kinetic coefficient of the interface of GaP/GaP(111)B in liquid phase epitaxy growth was obtained and the estimated value of macrostep wavelength agreed well with the measured one.

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