Non-stoichiometry related defects at the melt growth of semiconductor compound crystals

Crystal Research and Technology

Cryst. Res. Technol. 38, 542 (2003) - Abstract -

Non-stoichiometry related defects at the melt growth of semiconductor compound crystals – a review

P. Rudolph

Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany

Keywords	PbTe, CdTe, GaAs, InP, stoichiometry, point defects, dislocations, precipitates, inclusions
PACS	83.30, 81.10, 81.30, 61.72, 61.72.J, 61.72.F, 61.50
DOI	10.1002/crat.200310069

An overview on the defect knowledge in IV-VI (PbTe), II-VI (CdTe) and III-V (GaAs, InP) semiconductor compound crystals in dependence on non-stoichiometric growth conditions from the melt is given. The treatment starts with the today’s informations about the phase relations, i.e. the shape of the existence regions versus stoichiometry. Non-stoichiometry related melt growth phenomena are specified. After that selected intrinsic point defects and their influence on the impurity incorporation as function of deviation from stoichiometry are discussed. The interaction processes between native point defects and dislocation formation is touched. Finally, the serious mechanisms of precipitation and inclusion incorporation are shown. Possible measures of defect minimization are mentioned.

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