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Crystal Research and Technology |
Cryst. Res. Technol. 38,
604 (2003) - Abstract -
Macrosegregation in the growth of doped III-V-semiconductors from the solution
A. N. Danilewsky and J. Meinhardt
Kristallographisches Institut, Universität, 79104 Freiburg, Germany
In case of the solution growth of S-doped InP bulk crystals from the In solution the solutal convection plays the dominant role for the transport of matter even under microgravity conditions. A measure for the strength of convection is the macrosegregation. For various boundary conditions the axial segregation is described with modified classical segregation models. The measured and calculated physical parameters such as effective distribution and diffusion coefficients respectively allow a consistent formulation of macro- and microsegragtion.
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