Crystal Research and Technology
Cryst. Res. Technol. 38, 604 (2003) - Abstract -

Macrosegregation in the growth of doped III-V-semiconductors from the solution

A. N. Danilewsky and J. Meinhardt

Kristallographisches Institut, Universität, 79104 Freiburg, Germany

Keywords solution growth, indium phosphide, macrosegregation
PACS 81.05.Ea
DOI 10.1002/crat.200310074

In case of the solution growth of S-doped InP bulk crystals from the In solution the solutal convection plays the dominant role for the transport of matter even under microgravity conditions. A measure for the strength of convection is the macrosegregation. For various boundary conditions the axial segregation is described with modified classical segregation models. The measured and calculated physical parameters such as effective distribution and diffusion coefficients respectively allow a consistent formulation of macro- and microsegragtion.




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