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Crystal Research and Technology |
Cryst. Res. Technol. 38,
614 (2003) - Abstract -
Beam induced lateral epitaxy: a new approach for lateral growth in molecular beam epitaxy
T. Suzuki, S. Naritsuka, T. Maruyama, and T. Nishinaga
Faculty of Science and Technology, Meijo University. 1-501 Shiogamaguchi, Tempaku-ku, Nagoya 468-8502, Japan
| Keywords | molecular beam epitaxy, gallium arsenide, lateral growth, semiconductors |
| PACS | 81.15.Hi, 81.05.Ea, 81.65.Cf, 61.16.Ch |
| DOI | 10.1002/crat.200310075 |
Epitaxial lateral growth has been conducted without using oxide masks by a new technique called as beam induced lateral epitaxy (BILE). In this technique, molecular beams are sent in a glancing angle with respect to a substrate in MBE and a large lateral growth was accomplished on a side of pre-fabricated truncated ridges on the substrate. By using BILE we have successfully grown GaAs in lateral direction on GaAs(001) substrate. It was found that the growth behavior of BILE depends strongly on incident angle of the Ga beam. With the incident angle of 12°, a lateral growth of nearly 6ìm wide was achieved.
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