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Crystal Research and Technology |
Cryst. Res. Technol. 38,
654 (2003) - Abstract -
29Si and 30Si single crystal growth by mini-Czochralski technique
N. V. Abrosimov, H. Riemann, W. Schröder, H.-J. Pohl*, A. K. Kaliteevski**, O. N. Godisov**, V. A. Korolyov***, A. Ju. Zhilnikov***
Institute of Crystal Growth, Max-Born-Str. 2, 12489 Berlin, Germany
* VITCON Projectconsult GmbH, Otto-Schott-Str.13, 07745 Jena, Germany
** WTZ Centrotech ECP, Stachek ave. 47, 198096 St.-Petersburg, Russia
*** NPO Radium-Institute “Khlopin”, 2. Murinski Prospekt 28, 194021 St.-Petersburg, Russia
| Keywords | isotopic enrichment, Czochralski method, isotopic silicon, semiconducting silicon |
| PACS | 81.05.Cy, 81.10.Fq, 81.10.-h |
| DOI | 10.1002/crat.200310079 |
29Si and 30Si single crystals were grown for the first time from the highly isotopic enriched starting material. Si crystal growth from extremely small charge (the weight of 29Si and 30Si was 4,0g and 13,3g, respectively) was realized by mini-Czochralski technique (mini-CZ) which allowed the stable growth conditions during the whole growth process and practically complete volume of the melt was crystallized. To avoid the isotopic dilution SiC seed was used for the growth of 29Si.
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