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Crystal Research and Technology |
Cryst. Res. Technol. 38,
669 (2003) - Abstract -
Melt-crucible wetting behavior in semiconductor melt growth systems
A. Cröll, R. Lantzsch, S. Kitanov, N. Salk*, F. R. Szofran**, A. Tegetmeier***
Institut für NE-Metallurgie und Reinststoffe, Technische Universität Bergakademie Freiberg, Leipziger Str. 23, 09599 Freiberg, Germany
*Fraunhofer Institut für Fertigungstechnik und Angewandte Materialforschung, Wiener Str. 12, 28359 Bremen, Germany
**SD46, NASA Marshall Space Flight Center, Huntsville, AL 35812, USA
***Datenrevision GmbH, Cuxhavener Str. 36, 21149 Hamburg, Germany
| Keywords | wetting angle, semiconductors, melt growth |
| PACS | 68.08.Bc, 68.08.De, 81.05.Cy, 81.05.Ea, 81.10.Fq |
| DOI | 10.1002/crat.200310081 |
The wetting angles of several semiconductor-substrate combinations that are of practical importance for crystal growth have been measured: Ga-GaSb-Sb on fused quartz; Ge on fused quartz and carbon-based substrates, each with a selection of roughness; Si on fused quartz plates and on plates coated with fused quartz, Si3N4, and BN powders. The Ga-GaSb-Sb system showed no significant dependence of the wetting angle on the composition despite a large composition dependence of the surface tension. For Ge, the effect of the roughness on the angle could initially be seen on both types of substrates, but for the fused quartz substrates an equilibrium value independent of the surface treatment was reached after several hours of contact time. For Si, total wetting was found for Si3N4 powders. A reduction of the angle over time was found for both fused quartz and BN powders, with the BN powder showing the highest angle at 150-120°.
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