Diffusion effects at the Au/p-CuInSe2 contact studied by XPS by H. Neumann, M. V. Yakushev, and R. D. Tomlinson

Crystal Research and Technology

Cryst. Res. Technol. 38, 676 (2003) - Abstract -

Diffusion effects at the Au/p-CuInSe2 contact studied by XPS

H. Neumann, M. V. Yakushev*, and R. D. Tomlinson**

Fritz-Siemon-Strasse 26/111, 04347 Leipzig, Germany
* Department of Physics, University of Strathclyde, Glasgow G4 0NG, UK
** Department of Physics, University of Salford, Salford M5 4WT, UK

Keywords	Au/p-CuInSe₂ interface, annealing, diffusion, core level energies
PACS	68.35.Fx, 73.40.Ns, 79.60.Bm, 79.60.Jv
DOI	10.1002/crat.200310082

X-ray excited photoelectron spectroscopy (XPS) was used to investigate the reactions at the interface between Au and CuInSe₂ in case of Au/p-CuInSe₂ contacts produced by a procedure usually used to prepare low resistance ohmic contacts. Formation of an In-Au alloy is observed after an annealing step at 300°C in a non-oxidising atmosphere. Furthermore, it is found that some amount of gold diffuses into the CuInSe₂ substrate. A tentative defect model is proposed to describe the formation mechanism of Au/ p-CuInSe₂ contacts.

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