|
Crystal Research and Technology |
Cryst. Res. Technol. 38,
956 (2003) - Abstract -
Changes of Auger parameter in doped SnO2 powders
D. Dobler, S. Oswald, G. Behr, J. Werner, K. Wetzig
Leibniz-Institut für Festkörper- und Werkstoffforschung Dresden, Postfach 270116, 01171 Dresden, Germany
| Keywords | XPS, Auger parameter, oxides, Sn, electrical properties |
| PACS | 72.80.Jc, 79.60.Bm, 68.35.Dv |
| DOI | 10.1002/crat.200310120 |
Doped SnO2 powders were studied using X-ray photoelectron spectroscopy (XPS). The Auger parameters (AP) for Sn and different doping elements were determined. A dependence of the Auger parameter on the doping element and doping concentration was observed. The detected shift could be correlated with the electrical properties of the studied samples as well as with the formation of a second phase and a segregation layer at the surface. Bulk doping with elements having a valency greater than 4 (Sb), leads to an increase of the electron density connected with a decrease of resistivity. In this case we can observe the shift of the AP to higher values. This means that the relaxation of the electron holes is energetically more favourable for Sb doped than for pure tin oxide. On the other side, doping with elements the valency of which is less than 4 (In) on tin sites leads to a decrease in electron density and causes an increase of resistivity of the material. We observe in this case a shift of the AP to lower values due to lower relaxation energy.
The full text of this paper in pdf-Format: 
If you came directly to this page, click this symbol 
to go to the homepage of CRT.