Effect of crystal disorder on linewidth of the Raman modes in GaS<SUB>1-x</SUB>Se<SUB>x</SUB> layered mixed crystals by N. M. Gasanly

Crystal Research and Technology

Cryst. Res. Technol. 38, 962 (2003) - Abstract -

Effect of crystal disorder on linewidth of the Raman modes in GaS_1-xSe_x layered mixed crystals

N. M. Gasanly

Department of Physics, Middle East Technical University, 06531 Ankara, Turkey

Keywords	Raman scattering, crystal disorder, layered mixed crystals, GaS1-xSex
PACS	78.20.-e, 78.30.–j, 78.30.Hv
DOI	10.1002/crat.200310121

The linewidths of Raman-active intralayer compressional modes in GaS_1-xSe_x layered mixed crystals (0 <= x <= 1) have been measured in the 10-300 K temperature range to study the anharmonic effect as a function of compositional variation and temperature. It was found that the anharmonicity increases with an increase in substitutional disorder. The cubic (three-phonon) processes with energy conservation is responsible for the anharmonic contribution to the broadening of the intralayer phonon lines with temperature.

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