Studies on the growth and defects of La3Ga5SiO14 (LGS) crystals by Z. M. Wang, D. R. Yuan, D. Xu, M. K. Lv, L. H. Pan

Crystal Research and Technology

Cryst. Res. Technol. 38, 974 (2003) - Abstract -

Studies on the growth and defects of La₃Ga₅SiO₁₄ (LGS) crystals

Z. M. Wang, D. R. Yuan, D. Xu, M. K. Lv, L. H. Pan*

State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China
*Beijing Institute of Radio Metrology and Measurement, Beijing 100854, P. R. China

Keywords	La3Ga5SiO14 crystal, crystal growth, defects, piezoelectric materials, grain boundary
PACS	68.37.Lp, 61.72.Mm
DOI	10.1002/crat.200310123

New and high quality piezoelectric crystals La₃Ga₅SiO₁₄ (LGS) grown by the Czochralski method in a Platinum or Iridium crucible are reported in this paper. The growth defects in the LGS crystals were investigated by Transmission electron microscopy (TEM). It was found that cracks, inclusions, grain boundary and thermal stress in the LGS crystals. Their formation mechanisms and the method of eliminating these defects are discussed.

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