A comparative study for profiling ultrathin boron layers in Si by E. Basaran, O. Addemir, M. H. Aslan, and E. H. C. Parker

Crystal Research and Technology

Cryst. Res. Technol. 38, 1037 (2003) - Abstract -

A comparative study for profiling ultrathin boron layers in Si

E. Basaran, O. Addemir*, M. H. Aslan, and E. H. C. Parker**

Department of Physics, Gebze Institute of Technology, Kocaeli, 41400, Turkey
*Istanbul Technical University, Prof. Dr. Adnan Tekin High Technological Ceramics and Composites Research Center, Istanbul, Turkey
**Department of Physics, University of Warwick, Coventry, CV4 7AL, England

Keywords	Si, electrochemical C-V profiling, molecular beam epitaxy, spreading resistance, secondary ion mass spectrometry
PACS	73.40.Mr, 68.55.Ln, 68.55.Jk, 82.80.Ms
DOI	10.1002/crat.200310132

The carrier concentration-depth profiles of ultrathin boron layers in Si, grown by molecular beam epitaxy, are determined by the electrochemical capacitance-voltage (ECV) and the spreading resistance (SR) profiling techniques. Secondary ion mass spectrometry (SIMS) is employed as a base for the comparison of the results. It has been shown that, under carefully chosen conditions, both ECV and SR techniques are able to resolve ultrathin layers including a δ layer, however ECV match better with the results of SIMS than that of SR.

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