Studies on zirconium nitride films deposited by reactive magnetron sputtering by H. B. Bhuvaneswari, I. Nithiya Priya, R. Chandramani, V. Rajagopal Reddy, and G. Mohan Rao

Crystal Research and Technology

Cryst. Res. Technol. 38, 1047 (2003) - Abstract -

Studies on zirconium nitride films deposited by reactive magnetron sputtering

H. B. Bhuvaneswari*, I. Nithiya Priya, R. Chandramani**, V. Rajagopal Reddy*, and G. Mohan Rao

Department of Instrumentation, Indian Institute of Science, Bangalore 560012 India
*Mysore university PG centre, Hassan
**Bangalore University, Bangalore

Keywords	zirconium nitride/silicon thin films, dc reactive magnetron sputtering, optical constants, electrical resistivity
PACS	81.15.Cd, 68.55, 78.66
DOI	10.1002/crat.200310134

This paper deals with the preparation of Zirconium Nitride films by DC reactive magnetron sputtering. Films were deposited on silicon substrates at room temperature. Nitrogen partial pressure was varied from 4x10^-5 to 10x10^-5 mbar and the effect on the structural, electrical, optical properties of the films was systematically studied. The films formed at a nitrogen pressure of 6x10^-5 mbar showed low electrical resistivity of 1.726x10^-3 Ohm^.cm. The deposited films were found to be crystalline with refractive index and extinction co-efficient 1.95 and 0.4352 respectively.

The full text of this paper in pdf-Format:

If you came directly to this page, click this symbol

to go to the homepage of CRT.