Crystal Research and Technology
Cryst. Res. Technol. 39, 11 (2004) - Abstract -

High temperature arsenic doping of CdHgTe epitaxial layers

A. Vlasov, V. Bogoboyashchyy*, O. Bonchyk**, A. Barcz***

Ivan Franko National University, Physical Department,49 General Chuprynka Str., 79044, Lviv, Ukraine
*Kremenchuk State Polytechnical University, 20 Pershotravneva St., 39614 Kremenchuk, Ukraine
**Institute for Applied Problems of Mechanics and Mathematics of NASU,3-b Naukova Str., 79601, Lviv, Ukraine
***Institute of Physics of Polish Academy of Sciences, 32/46 Al. Lotnikow, 02-668 Warsaw, Poland

Keywords doping, diffusion, graded-band-gap structures, CdHgTe
PACS 85.40.Ry
DOI 10.1002/crat.200310143

Experimental results on solid-state arsenic doping of the n-type bulk and ISOVPE epitaxial CdxHg1-xTe (x = 0.19-0.3) alloys are presented. The arsenic doped thin epitaxial CdxHg1-xTe films (nAs ~ 5x1016-1x1020 cm-3; d =2-5μm) obtained by RF sputtering in a mercury glow discharge were used as As diffusion sources. The arsenic diffusion and activation were carried out at temperatures T = 500-600°C under Hg vapour pressure. Immediately after the high temperature treatment all samples were annealed to annihilate point defects. The SIMS analysis was used for determination of the quantitative admixture distribution of As in the diffusion area. The arsenic electrical activity has been evaluated by means of differential Hall, resistivity and thermo-emf measurements. The analysis of experimental data obtained as well as their comparison with previously obtained results has been performed.



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