Mott-hopping processes in neodymium oxide thin films prepared on Si(100) substrates by A. A. Dakhel

Crystal Research and Technology

Cryst. Res. Technol. 39, 404 (2004) - Abstract -

Mott-hopping processes in neodymium oxide thin films prepared on Si(100) substrates

A. A. Dakhel

Dept. Of Physics, College of Science, University of Bahrain, P.O. Box 32038, Bahrain

Keywords	insulating films, neodymium oxide, dielectric phenomena, Mott VRH
PACS	77.55.+f, 72.20.-I
DOI	10.1002/crat.200310202

Thin Nd oxide films were prepared on Si (P) substrates to form MOS structure. The oxide films were annealed at different conditions and their crystal structures were determined by X-ray diffraction (XRD). The dc electrical transport properties of the devices with amorphous and crystalline Nd oxide were investigated. The current-temperature J(T) characteristics suggest that the carrier transport through the insulator follows Mott’s variable-range hopping (VRH) mechanism and its results were compared with the results obtained from X-ray diffraction.

The full text of this paper in pdf-Format:

If you have come directly to this page, click this symbol

to go to the CRT homepage.