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Crystal Research and Technology |
Cryst. Res. Technol. 39,
439 (2004) - Abstract -
Investigation of carrier scattering mechanisms in TlInS2 single crystals by Hall effect measurements
A. F. Qasrawi and N. M. Gasanly*
Department of Electrical and Electronics Engineering, Atilim University, 06836 Ankara, Turkey
*Department of Physics, Middle East Technical University, 06531 Ankara, Turkey
| Keywords | TlInS2, Hall effect, conductivity, mobility, coupling constant, phonon, scattering |
| PACS | 71.23.An, 71.55.Cn, 72.10.Di, 72.20.Dp, 72.20.Nr |
| DOI | 10.1002/crat.200310208 |
TlInS2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole- and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 meV and a set of donor energy levels located at 360, 280, 220 and 170/152 meV are determined from the temperature dependencies of the carrier concentration and conductivity. A hole, electron, hole-electron pair effective masses of 0.24 m0, 0.14 m0 and 0.09 m0 and hole- and electron-phonon coupling constants of 0.50 and 0.64, respectively, are obtained from the Hall effect measurements. The theoretical fit of the Hall coefficient reveals a hole to electron mobility ratio of 0.8.
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