Thermoelectrical properties of In<SUB>1-x</SUB>Ga<SUB>x</SUB>As and InAs crystals irradiated with fast electrons by M. I. Aliyev, Sh. Sh. Rashidova, I. M. Aliyev, M. A. Huseynova, and M. A. Jafarova

Crystal Research and Technology

Cryst. Res. Technol. 39, 598 (2004) - Abstract -

Thermoelectrical properties of In_1-xGa_xAs and InAs crystals irradiated with fast electrons

M. I. Aliyev, Sh. Sh. Rashidova, I. M. Aliyev, M. A. Huseynova, and M. A. Jafarova

National Academy of Sciences of Azerbaijan, Institute of Physics, 33 H.Javid av., Baku, Az1143, Azerbaijan

Keywords	thermoelectric power, semiconductors, indium arsenide, irradiation
PACS	72.15.J
DOI	10.1002/crat.200310230

The thermoelectric power in In_1-xGa_xAs (x=0,01;0,04) solid solutions and InAs crystals irradiated with fast electrons by the energy of 6 MeV and dose of 10¹⁶- 2x10¹⁷ el/cm^-2 on the interval 80-400K have been investigated. It is revealed that in the all crystals the value of the thermoelectric power is decreased under irradiation that resulted from the growth of the free electron concentration to form radiation induced defects of the donor type. It has been determined that in the initial InAs after irradiation, the charge carriers scatter on optical phonons and in In_1-xGa_xAs solid solutions they do on optical phonons and ionized impurities.

The full text of this paper in pdf-Format:

If you have come directly to this page, click this symbol

to go to the CRT homepage.