Crystal Research and Technology
Cryst. Res. Technol. 39, 686 (2004) - Abstract -

Growth and characterization of La3Ga5.5Ta0.5O14 crystal

Haikuan Kong, Jiyang Wang, Huaijin Zhang, Xin Yin, Xiufeng Cheng, Yanting Lin, Xiaobo Hu, Xiangang Xu, and Minhua Jiang

State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P.R. China

Keywords La3Ga5.5Ta0.5O14, Czochralski method, spectra, electrooptic Q-switch
PACS 65.40.De, 78.20.Ci, 78.20.Jq
DOI 10.1002/crat.200310239

La3Ga5.5Ta0.5O14 (LGT) crystal was grown by using the Czochralski method. The as-grown crystal is transparent, free from inclusions and with no cracks. Specific heat, thermal expansion, dielectric constants, transmission spectrum and optical damage threshold of LGT have been measured, and the results show general properties of LGT are similar to that of La3Ga5SiO14 (LGS) crystal. The experiment to research the Q-switch properties of LGT has been performed and the results show LGT possesses smaller electrooptic coefficients than that of LGS and may not be an ideal material used as a Q-switch.




The full text of this paper in pdf-Format:

If you have come directly to this page, click this symbol to go to the CRT homepage.