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Crystal Research and Technology |
Cryst. Res. Technol. 39,
788 (2004) - Abstract -
Stable and transient color centers in Gd3Ga5O12 crystals
A. Matkovskii, P. Potera, D. Sugak*, L. Grigorjeva**, D. Millers**, V. Pankratov**, and A. Suchocki***
Institute of Physics, University of Rzeszow, Rzeszow, Poland
*Lviv Polytechnic National University, Lviv, Ukraine
**Institute of Solid State Physics, University of Latvia, Riga, Latvia
***Institute of Physics PAS, Warsaw, Poland
| Keywords | Gd3Ga5O12, optical absorption, color centers, γ irradaiation |
| PACS | 61.72.Ji, 42.70.Hj, 61.80.Ed, 76.30.Mi |
| DOI | 10.1002/crat.200310254 |
The work is devoted to investigation of stable color centers (CC) that are created in Gd3Ga5O12 (GGG) crystals under irradiation with γ-quanta (E=1.25 MeV, D= 105 Gy ) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E=0.25 MeV, pulse duration 10 ns, fluence 1012 cm-2, time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed.
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