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Crystal Research and Technology |
Cryst. Res. Technol. 39,
800 (2004) - Abstract -
Infrared photoluminescence from TlGaS2 layered single crystals
N. S. Yuksek, N. M. Gasanly, A. Aydinli*, H. Ozkan, and M. Acikgoz
Physics Department, Middle East Technical University, 06531 Ankara, Turkey
*Physics Department, Bilkent University, 06533 Ankara, Turkey
| Keywords | photoluminescence, semiconductors, layered crystals, defect levels, TlGaS2 |
| PACS | 71.20.-b, 71.20.Nr, 78.20.-e, 78.55.-m |
| DOI | 10.1002/crat.200310256 |
Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K. We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) and 1102 nm (C-band) in the PL spectrum. The observed bands have half-widths of 0.221, 0.258 and 0.067 eV for A-, B-, and C-bands, respectively. The increase of the emission band half-width, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature are explained using the configuration coordinate model. We have also studied the variations of emission band intensity versus excitation laser intensity in the range from 0.4 to 19.5 W cm-2. The proposed energy-level diagram allows us to interpret the recombination processes in TlGaS2 crystals.
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