|
Crystal Research and Technology |
Cryst. Res. Technol. 39,
873 (2004) - Abstract -
Crystal growth and characterization of the CdGaCrSe4-XSX system
V. Sagredo, L. Betancourt, L. M. de Chalbaud, and G. E. Delgado*
Laboratorio de Magnetismo en Sólidos, Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela
*Laboratorio de Cristalografía, Departamento de Química, Facultad de Ciencias, Universidad de Los Andes, Mérida 5101, Venezuela
| Keywords | magnetic semiconductor, crystal growth, X-ray powder diffraction |
| PACS | 81.10.Fq, 61.10.Nz |
| DOI | 10.1002/crat.200410269 |
Single-crystal of the CdGaCrSe4-XSX system (x = 0; 1; 2; 3; 4) were grown by the chemical vapour-phase transport technique. The crystals were obtaine by using CdCl2 as transporting agent for the composition with x = 1, and CrCl3 for those with x = 0; 2; 3 and 4. X-ray powder diffraction analysis indicated that some of the samples crystallizes in the tetragonal system with space group I-4 (CdGaCrSe3S , x = 1; CdGaCrSe2S2 , x = 2), or in a cubic system with space group Fd-3m (CdGaCrSeS3, x = 3; CdGaCrS4, x = 4), however the sample of CdGaCrSe4 (x = 0) crystallizes in rhombohedral system. Magnetic measurements show significant changes in the magnetic interactions behaviour probably due to the anionic substitutions.
The full text of this paper in pdf-Format: 
If you have come directly to this page, click this symbol 
to go to the CRT homepage.