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Crystal Research and Technology |
Cryst. Res. Technol. 39,
877 (2004) - Abstract -
Crystal growth of the CdGa2(1-x)Cr2xSe4 compounds by chemical transport method
V. Sagredo and L. M. de Chalbaud
Department of Physics, Faculty of Science, Universidad de los Andes, Mérida, Venezuela
| Keywords | magnetic semiconductor, crystal growth, x-ray diffraction |
| PACS | 80.10.Fq, 60.10.Nz |
| DOI | 10.1002/crat.200410270 |
Single crystals of CdGa2(1-x)Cr2xSe4 compounds for 0 <= x <= 1 have been grown by using the chemical vapor transport technique in a closed system. The transporting agent was CdCl2 in a proportion of 0.75 mg/cc of capsule. The starting material was previously synthetized. The structural characterization on the crystals were done by powder x-ray diffraction studies. The results show three different phases for various Cr concentration ranges: spinel structure for x >= 0.7, rombohedral for 0.6 >= x >= 0.5 and tetragonal for 0.4 >= x >= 0. That is, the chromium dilution in the CdCr2Se4 compound by Ga atoms produces very significant changes in the structural atomic arrangement.
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