Crystal Research and Technology
Cryst. Res. Technol. 39, 881 (2004) - Abstract -

Properties of Hg1-xCdxTe epitaxial films grown on (211)CdTe and (211)CdZnTe

M. C. Di Stefano, E. Heredia*, U. Gilabert, and A. B. Trigubó

Facultad Regional Buenos Aires – Universidad Tecnológica Nacional (FRBA-UTN)
*Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas (CITEFA)

Keywords Hg1-xCdxTe, MCT, ISOVPE, epitaxial films
PACS 68.55.-a
DOI 10.1002/crat.200410271

Hg1-xCdxTe (MCT) epitaxial films have been grown employing single crystalline substrates of CdTe and Cd0.96Zn0.04Te with (211)Cd and (211)Te crystalline orientations. The Isothermal Vapor Phase Epitaxy (ISOVPE) technique without Hg overpressure has been used for the epitaxial growth. Substrates and films were characterized by optical microscopy, chemical etching and X-ray diffraction (Laue technique). The electrical properties were determined by Hall effect measurements. The characterization results allowed to evaluate the crystalline quality of MCT films.




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