Crystal Research and Technology
Cryst. Res. Technol. 39, 892 (2004) - Abstract -

Addition of an insulating element to the Modified Markov Method for CdTe single crystals growth

E. Saucedo, C. M. Ruiz*, L. Fornaro, V. Corregidor*, and E. Diéguez*

Compound Semicondutors Group, Faculty of Chemistry, Universidad de la República, Montevideo 11800, Uruguay
*Material Physics Department, Universidad Autónoma de Madrid, Madrid 28049, Spain

Keywords cadmium telluride, Modified Markov Method, single crystals, X-ray rocking curves
PACS 81.10.Bk, 81.05.Dz, 61.10.Nz
DOI 10.1002/crat.200410273

CdTe single crystal, were grown by the Modified Markov Method. We have introduced an insulating element between the furnace and the growth chamber, trying to minimize the radiation effects in the crystal. Numerical simulation of the heat transfer phenomena predict a reduction of the axial temperature gradient in the growth chamber, confirming by numerical experimental measurements, leading to a more uniform growth. An improvement in the surface morphology and in the crystal quality as well was achieved, evaluated by the combination of X-ray rocking curves, etch pit density determination and low temperature photoluminescence.




The full text of this paper in pdf-Format:

If you have come directly to this page, click this symbol to go to the CRT homepage.