Analysis of Er incorporation on GaSb substrates by diffusion by C. M. Ruiz, J. L. Plaza, V. Bermúdez, and E. Diéguez

Crystal Research and Technology

Cryst. Res. Technol. 39, 932 (2004) - Abstract -

Analysis of Er incorporation on GaSb substrates by diffusion

C. M. Ruiz, J. L. Plaza, V. Bermúdez, and E. Diéguez

Dep. Física de Materiales, Facultad de Ciencias, Universidad Autónoma de Madrid, 28049 Madrid (Spain)

Keywords	Er incorporation,GaSb substrates, diffusion
PACS	81.05.Ea, 66.30.Jt, 78.55.Cr, 68.37.Hk, 81.10.Fq, 81.10.Jt
DOI	10.1002/crat.200410279

On this work, two different ways of introducing Er ions to GaSb crystals, one bulk doped and the other Er diffused are compared in order to obtain Er luminescence on GaSb matrix. For this objetive, photoluminescence measurements indicate that there is Er luminescence on the diffused sample, while on the bulk doped, not only there is no Er activation, but crystal quality decreases severally. Surface analysis of diffused sample shows the presence of holes all over the surface.

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