Microstructural, thermal, and electrical properties of Bi1.7V0.3Sr2Ca2Cu3Ox glass-ceramic superconductor by T. S. Kayed, N. Calinli, E. Aksu, H. Koralay, A. Günen, I. Ercan, S. Aktürk, and S. Cavdar

Crystal Research and Technology

Cryst. Res. Technol. 39, 1063 (2004) - Abstract -

Microstructural, thermal, and electrical properties of Bi_1.7V_0.3Sr₂Ca₂Cu₃O_x glass-ceramic superconductor

T. S. Kayed, N. Calinli*, E. Aksu*, H. Koralay*, A. Günen**, I. Ercan***, S. Aktürk****, and S. Cavdar*

Department of Electrical and Electronics Engineering, Atilim University, 06836 Incek, Ankara, Turkey
*Ankara Nuclear Research and Training Center, TAEA, 06100 Besevler, Ankara, Turkey
**Department of Physics, Faculty of Arts and Science, Gazi University, Teknik Okullar, Ankara, Turkey
***Abant Izzet Baysal University, Duzce Technical Education Faculty, Bolu, Turkey
****Department of Physics, Faculty of Arts and Science, Kirikkale University, Kirikkale, Turkey

Keywords	glass-ceramic high temperature superconductors, Hall effect, BSCCO
PACS	74.72.Jt, 74.62.Bf, 74.25.Fy
DOI	10.1002/crat.200410291

A glass-ceramic Bi_1.7V_0.3Sr₂Ca₂Cu₃O_x superconductor was prepared by the melt-quenching method. The compound was characterized by scanning electron microscopy, x-ray diffraction, differential thermal analysis, current-voltage characteristics, transport resistance measurements, and Hall effect measurements. Two main phases (BSCCO 2212 and 2223) were observed in the x-ray data and the values of the lattice parameters quite agree with the known values for 2212 and 2223 phases. The glass transition temperature was found to be 426 °C while the activation energy for crystallization of glass has been found to be E_a = 370.5 kJ / mol. This result indicates that the substitution of vanadium increased the activation energy for the BSCCO system. An offset T_c of 80 K was measured and the onset T_c was 100 K. The Hall resistivity ρ_H was found to be almost field-independent at the normal state. A negative Hall coefficient was observed and no sign reversal of ρ_H or R_H could be noticed. The mobility and carrier density at different temperatures in the range 140-300 K under different applied magnetic fields up to 1.4 T were also measured and the results are discussed.

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