Crystal Research and Technology
Cryst. Res. Technol. 39, 1115 (2004) - Abstract -

Effects of annealing on the lattice parameter of polycrystalline CdS thin films

R. Lozada-Morales and O. Zelaya-Angel*

Facultad de Ciencias Físico-Matemáticas, BUAP, Puebla, México
*Department of Physics, Centro de Investigación y de Estudios Avanzados del IPN. P.O. Box 14-740, México 07360 D.F.

Keywords annealing, CdS, thin films
PACS 64.70.Kb, 78.66.Hf, 81.05.Cy, 81.30.Hd
DOI 10.1002/crat.200410298

Cubic CdS (β-CdS) polycrystalline thin films were prepared on glass substrates by chemical synthesis at 80 °C. Samples were subjected to thermal treatments (TT) in the range of temperatures (T) 180 – 500 °C during 30 hours in different ambients. Annealing in air and in H2 produces in CdS larger lattice parameter enlargements (≤ 2.5 %) when T of TT increases up to T ≤ 500 °C. Whereas, annealing in Ar + S2 and vacuum provokes intermediate (≤ 1.2 %) and smaller (≤ 0.9 %) maxima values of the lattice parameter increments, respectively. Energy band gap (Eg) as a function of T of TT and as a function of the lattice parameter has been also studied where it was observed that Eg behaves in very different manners depending on the ambient chosen for annealing.




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