Dislocation cell structures in melt-grown semiconductor compound crystals by P. Rudolph

Crystal Research and Technology

Cryst. Res. Technol. 40, 7 (2005) - Abstract -

Dislocation cell structures in melt-grown semiconductor compound crystals

P. Rudolph

Institut für Kristallzüchtung, Max-Born-Str. 2, 12489 Berlin, Germany

Keywords	melt growth, dislocation dynamics, cell structuring, grain boundaries, III-V, II-VI, IV-VI
PACS	81.05D, 81.10.Fq, 61.72Ef, 61.66.Hq
DOI	10.1002/crat.200410302

The phenomenon of dislocation patterning during melt growth of III-V, II-VI and IV-VI semiconductor crystals is discussed. The paper is focused on the formation of cellular structures driven by the growth inherent thermo-mechanical stress. Of particular interest is the scaling of relations between cells size, dislocation density and acting shear stress. Among the materials there are characteristic similarities but also significant variations of the cell genesis. After the related compound specifics are discussed possible measures for retardation of cell patterning during growth are demonstrated.

The full text of this paper in pdf-Format:

If you have come directly to this page, click this symbol

to go to the CRT homepage.