Floating zone growth of CuO under elevated oxygen pressure and its relevance for the crystal growth of cuprates by G. Behr, W. Löser, M.-O. Apostu, W. Gruner, M. Hücker, L. Schramm1, D. Souptel, A. Teresiak, and J. Werner

Crystal Research and Technology

Cryst. Res. Technol. 40, 21 (2005) - Abstract -

Floating zone growth of CuO under elevated oxygen pressure and its relevance for the crystal growth of cuprates

G. Behr, W. Löser, M.-O. Apostu*, W. Gruner, M. Hücker**, L. Schramm1, D. Souptel, A. Teresiak, and J. Werner

IFW Dresden, Leibniz-Institut für Festkörper- und Werkstoffforschung, Helmholtzstr. 20, 01171 Dresden, Germany
*Al.I. Cuza University, Bd. Carol I, 6600 Iasi, Romania
**Physics Department, Brookhaven National Laboratory, Upton, New York, 11973, USA

Keywords	crystal growth, floating zone technique, CuO, oxides
PACS	74.72.It, 81.10.Fq, 81.30.-t
DOI	10.1002/crat.200410303

CuO single crystals have been grown from the melt by a floating zone method with optical heating at elevated oxygen pressures 3.5 to 5.5 MPa and growth rates as high as 10 mm/h. Melting experiments and recalculated Cu-O phase diagram data show that CuO melts incongruently. The melting temperature increases and the concentration difference between the melt and the CuO phase decreases for rising oxygen partial pressure. Accordingly, increasing the oxygen partial pressure improves the growth process by reducing both the significant oxygen loss during melting as well as the composition difference at the growth interface. The results on CuO provide important information for the crystal growth of more complex cuprates.

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