| Crystal Research and Technology |
| Keywords | sol-gel, aluminium oxide, aluminosilicate, mullitisation, thin film, silica interlayer, solid-state reaction, Wide-angle X-ray scattering (WAXS), X-ray reflectivity |
| PACS | 61.10.Kw, 61.10.Nz, 68.55.-a, 68.55.Nq, 81.20.Fw |
| DOI | 10.1002/crat.200410314 |
The dedicated formation of crystalline coatings of the trimorphous aluminosilicates with the composition of Al2SiO5 starting from a low-cost sol-gel deposition of alumina thin films is reported. The influence of substrate type and film thickness on the crystallisation behaviour and film morphology is studied by means of wide-angle X-ray scattering (WAXS) and X-ray reflectometry (XR). When annealed at a temperature of 1150 °C under high-vacuum conditions, formation of the aimed phases was achieved only for films deposited on naturally oxidised Si-substrates covered with a thin silica layer (thickness is about 3 nm). In the case of films deposited on amorphous quartz glass and thermally oxidised Si-substrates covered with a thick silica layer (thickness is about 500 nm) no crystallisation occurred at this temperature. After annealing at the higher temperature of 1300 °C under high-vacuum conditions, in the films deposited on both kinds of Si-substrates mullite (Al4SiO8) crystallises together with cristobalite (SiO2) whereas the film deposited on the quartz glass substrate remains amorphous from viewpoint of WAXS.

