Raman spectroscopic and X-ray investigation of stressed states in diamond-like carbon films by R. Krawietz, B. Kämpfe, E. Auerswald, and M. Brücher

Crystal Research and Technology

Cryst. Res. Technol. 40, 143 (2005) - Abstract -

Raman spectroscopic and X-ray investigation of stressed states in diamond-like carbon films

R. Krawietz, B. Kämpfe*, E. Auerswald*, and M. Brücher**

University of Applied Sciences, HTW, 01062 Dresden, Germany
*Fraunhofer Institute for Reliability and Microintegration, IZM, 13355 Berlin, Germany
**Fraunhofer Institute for Production Systems and Design Technology, IPK, 10587 Berlin, Germany

Keywords	diamond-like carbon, stress, X-ray diffraction, Raman spectroscopy, piezo-spectroscopic effect
PACS	68.60.Bs
DOI	10.1002/crat.200410317

The non-destructive characterization of intrinsic stress is very important to evaluate the reliability of devices based on diamond-like carbon (DLC) films. Whereas the only requirement for the X-ray diffraction method is a crystalline state of specimen, Raman spectroscopic stress analysis is restricted to materials showing intensive and sharp Raman peaks. On the other hand, Raman spectroscopy offers the possibility to measure stress profiles with lateral resolution of about 1 micron. The results of stress measurements in DLC films using both X-ray diffraction and Raman spectroscopy are found in very good correspondence. Mean stress in carbon films consisting of very small crystallites on silicon substrates has been determined by measuring and fitting the stress profiles in the substrate near artificial vertical film edges.

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