Effect of calcination on the crystallinity of sputtered TiO2 thin films as studied by Raman scattering by B. Karunagaran, D. Mangalaraj, Kyunghae Kim, Byungyou Hong, Yonghan Roh, Cheon Seok Park, and Junsin Yi

Crystal Research and Technology

Cryst. Res. Technol. 40, 222 (2005) - Abstract -

Effect of calcination on the crystallinity of sputtered TiO₂ thin films as studied by Raman scattering

B. Karunagaran, D. Mangalaraj, Kyunghae Kim, Byungyou Hong, Yonghan Roh, Cheon Seok Park, and Junsin Yi

School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440746, Korea

Keywords	TiO2, thin films, sputtering, Raman
PACS	78.30, 81.15.c
DOI	10.1002/crat.200410329

Titanium dioxide films have been deposited using DC magnetron sputtering technique onto silicon substrates at an ambient temperature and at an oxygen partial pressure of 7x10^–5mbar and sputtering pressure (Ar + O₂) of 1x10^–3mbar. The deposited films were calcinated at 673 and 773 K. The composition of the films as analyzed using Auger Electron Spectroscopy (AES) revealed the stoichiometry with an O and Ti ratio of 2.08. The influence of post-deposition calcination on the Raman scattering of the films was studied. The existence of Raman active modes A_1g, B_1g and E_g corresponding to the Raman shifts are reported in this paper. The improvement of crystallinity of the TiO₂ films as shown by the Raman scattering studies has also been reported.

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