The conductivity, mobility, photoconductivity and photo response measurements in GaS_0.75Se_0.25 mixed crystals were carried out in the temperature range of 150-450 K. The room temperature conductivity, mobility and electron concentration values were 10^-9 (Ωcm)^-1, 48 cm²V^-1s^-1 and ~10⁹ cm^-3, respectively. Two donor levels were obtained from temperature-dependent conductivity and carrier concentration, located at energies of about 755 and 465 meV below the conduction band. Single donor-single acceptor analysis yields the same donor level at 465 meV with donor and acceptor concentrations of 8.7x10¹⁴ and 5.3x10¹³ cm^-3, respectively. The mobility-temperature dependence shows that ionized impurity scattering dominates the conduction up to the temperature 310 K with different temperature exponent, while above this critical temperature; the phonon scattering is dominant conduction mechanism. From the photo-response spectra, the maximum photocurrent was observed for all the samples at 2.42 eV, and varied slightly with temperature. Moreover, the photocurrent-light intensity dependence in these crystals obeys the power law for various applied fields and temperatures.

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