Silicon crystal growth from the melt: Analysis from atomic and macro scales by K. Kakimoto, L. Liu, T. Kitashima, A. Murakawa, and Y. Hashimoto

Crystal Research and Technology

Cryst. Res. Technol. 40, 307 (2005) - Abstract -

Silicon crystal growth from the melt: Analysis from atomic and macro scales

K. Kakimoto, L. Liu, T. Kitashima, A. Murakawa, and Y. Hashimoto

Research Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga 816-8580, Japan

Keywords	silicon, thermal conductivity, global model
PACS	47.27.-I, 47.27.E, 81.10.Aj
DOI	10.1002/crat.200410343

The effect of impurity concentration on thermal conductivity of natural and isotope silicon by using equilibrium molecular dynamics simulation is investigated. It was found that the concentrations of the impurities such as boron, phosphor and arsene play an important role in the propagation of phonons in silicon crystals. It was also clarified that a mass difference of impurities and host crystals results in degradation of thermal conductivity of silicon.

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