Growth of single crystals under magnetic field is of interest for suppressing the adverse effect of natural convection and for better mixing in the liquid solution, which are the favorable conditions for prolonged growth and high quality crystals. In this short review article, recent developments in the modelling of electroepitaxy under magnetic field are presented. An application is given for the liquid phase electroepitaxial growth of GaAs bulk single crystals under a static magnetic field. Experimental results, that have shown that the growth rate under an applied static magnetic field is proportional to the applied magnetic field, and increases with the field intensity level, are predicted from the present model. The model also predicts growth interface shapes accurately.

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