Crystal Research and Technology
Cryst. Res. Technol. 40, 347 (2005) - Abstract -

3D global analysis of CZ-Si growth in a transverse magnetic field with rotating crucible and crystal

Lijun Liu and Koichi Kakimoto

Research Institute for Applied Mechanics, Kyushu University, 6-1, Kasuga-Koen, Kasuga 816-8580, Japan

Keywords magnetic fields, computer simulation, global modeling, Czochralski method, semiconducting silicon
PACS 68.08.-p, 81.10.Dn, 47.27.Te
DOI 10.1002/crat.200410349

Three-dimensional global simulations were carried out for a small Czochralski furnace for silicon crystal growth with a recently developed global model. The furnace is placed in a transverse magnetic field with rotating crucible and crystal. The convective, conductive and radiative heat transfers in the entire furnace were solved in a three-dimensionally conjugated way. Three-dimensional distributions of temperature and velocity were analyzed. The melt-crystal interface was found to have nearly rotational symmetry, and the azimuthal non-uniformity of temperature is much weaker on the crystal and crucible sidewalls in the case of high rotation rates of crucible and crystal than in the case of non-rotating crucible and crystal.




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