Crystal Research and Technology
Cryst. Res. Technol. 40, 386 (2005) - Abstract -

Growth and optical characterization of Cd1-xBexSe and Cd1-xMgxSe crystals

F. Firszt, A. A. Wronkowska*, A. Wronkowski*, S. Legowski, A. Marasek, H. Meczyńska, M. Pawlak, W. Paszkowicz**, K. Strzalkowski, and A. J. Zakrzewski

Institute of Physics, N. Copernicus University, Grudziądzka 5/7, 87-100 Toruń, Poland
*Institute of Mathematics and Physics, University of Technology and Agriculture, Al. S. Kaliskiego 7, Bydgoszcz PL-85 796, Poland
**Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668, Warsaw, Poland

Keywords II-VI solid solutions, crystal growth, ellipsometric measurements, photoluminescence, photoacoustics
PACS 81.05.Dz, 81.10.Fg, 78.55.Et, 61.43.Dq, 77.22.Ch, 78.20.Ci, 78.20.Hp
DOI 10.1002/crat.200410355

Cd1-xBexSe and Cd1-xMgxSe solid solutions were grown from the melt by the high pressure Bridgman method. Optical, luminescence and photothermal properties of these materials were investigated. Spectroscopic ellipsometry was applied for determination of the spectral dependence of the complex dielectric function ε(E) and refractive index n(E) at room temperature in the photon energy range 0.75-6.5 eV for samples with optic axis (c-axis) perpendicular to the air-sample interface. The critical point (CP) parameters for E0 and E1 transitions were determined using a standard excitonic CP function to fit the numerically calculated differential spectra. The dispersion of the refractive index of the alloys was modelled using a Sellmeier-type relation. The values of fundamental and exciton band-gap energies were estimated from the ellipsometric and photoluminescence measurements. The origin of luminescence in Cd1-xBexSe and Cd1-xMgxSe was discussed.




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